void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u32 secpos; //扇区地址
u16 secoff; //扇区内偏移地址(16位字计算)
u16 secremain; //扇区内剩余地址(16位字计算)
u16 i;
u32 offaddr; //去掉0X08000000后的地址
if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
FLASH_Unlock(); //解锁
offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
secpos=offaddr/STM_SECTOR_SIZE; //扇区地址 0~127 for STM32F103RBT6
secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
while(1)
{
STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
for(i=0;i<secremain;i++)//校验数据
{
if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
}
if(i<secremain)//需要擦除
{
FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//擦除这个扇区
for(i=0;i<secremain;i++)//复制
{
STMFLASH_BUF[i+secoff]=pBuffer[i];
}
STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
}else STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
if(NumToWrite==secremain)break;//写入结束了
else//写入未结束
{
secpos++; //扇区地址增1
secoff=0; //偏移位置为0
pBuffer+=secremain; //指针偏移
WriteAddr+=secremain; //写地址偏移
NumToWrite-=secremain; //字节(16位)数递减
if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
else secremain=NumToWrite;//下一个扇区可以写完了
}
};
FLASH_Lock();//上锁
}
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void STMFLASH_Write_NoCheck(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u16 i;
for(i=0;i<NumToWrite;i++)
{
FLASH_ProgramHalfWord(WriteAddr,pBuffer[i]);
WriteAddr+=2;//地址增加2.
}
}
//从指定地址开始写入指定长度的数据
//WriteAddr:起始地址(此地址必须为2的倍数!!)
//pBuffer:数据指针
//NumToWrite:半字(16位)数(就是要写入的16位数据的个数.)
#if STM32_FLASH_SIZE<256
#define STM_SECTOR_SIZE 1024 //字节
#else
#define STM_SECTOR_SIZE 2048
#endif
u16 STMFLASH_BUF[STM_SECTOR_SIZE/2];//最多是2K字节
void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u32 secpos; //扇区地址
u16 secoff; //扇区内偏移地址(16位字计算)
u16 secremain; //扇区内剩余地址(16位字计算)
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