改动官方例程，使用STM32F103VCT(100pin)，is61LV51216的SRAM,8M，FSMC配置如下：

#define Bank1_SRAM3_ADDR    ((u32)0x68000000)
    void FSMC_SRAM_Init(void){   FSMC_NORSRAMInitTypeDef  FSMC_NORSRAMInitStructure;   FSMC_NORSRAMTimingInitTypeDef  p;   GPIO_InitTypeDef GPIO_InitStructure;       RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD | RCC_APB2Periph_GPIOC | RCC_APB2Periph_GPIOE , ENABLE);    /*-- GPIO Configuration ------------------------------------------------------*/   /* SRAM Data lines configuration */

  GPIO_InitStructure.GPIO_Pin = GPIO_Pin_0 | GPIO_Pin_1 | GPIO_Pin_2 | GPIO_Pin_3 |                                 GPIO_Pin_4 | GPIO_Pin_5 | GPIO_Pin_6 | GPIO_Pin_7;   GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP;   GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;   GPIO_Init(GPIOE, &GPIO_InitStructure);       GPIO_InitStructure.GPIO_Pin =  GPIO_Pin_8 | GPIO_Pin_9 | GPIO_Pin_10 | GPIO_Pin_11 |                                  GPIO_Pin_12 | GPIO_Pin_13 | GPIO_Pin_14 | GPIO_Pin_15;                                    GPIO_Init(GPIOE, &GPIO_InitStructure);      /* SRAM Address lines configuration  */   GPIO_InitStructure.GPIO_Pin = GPIO_Pin_0 | GPIO_Pin_1 | GPIO_Pin_2 | GPIO_Pin_3 |                                  GPIO_Pin_4 | GPIO_Pin_5 | GPIO_Pin_6 | GPIO_Pin_7;                                      GPIO_Init(GPIOD, &GPIO_InitStructure);      GPIO_InitStructure.GPIO_Pin = GPIO_Pin_8 | GPIO_Pin_9 | GPIO_Pin_10 | GPIO_Pin_11 |                                  GPIO_Pin_12 | GPIO_Pin_13 | GPIO_Pin_14 | GPIO_Pin_15;   GPIO_Init(GPIOD, &GPIO_InitStructure);      GPIO_InitStructure.GPIO_Pin = GPIO_Pin_6 | GPIO_Pin_7 | GPIO_Pin_8;    GPIO_Init(GPIOC, &GPIO_InitStructure);       /* NOE and NWE configuration */     GPIO_InitStructure.GPIO_Pin = GPIO_Pin_10 |GPIO_Pin_11;   GPIO_Init(GPIOC, &GPIO_InitStructure);      /* NE3 configuration */   GPIO_InitStructure.GPIO_Pin = GPIO_Pin_9;    GPIO_Init(GPIOC, &GPIO_InitStructure);      /* NBL0, NBL1 configuration */    GPIO_InitStructure.GPIO_Pin = GPIO_Pin_4 | GPIO_Pin_5;    GPIO_Init(GPIOC, &GPIO_InitStructure);  
 RCC -> AHBENR |= 0x00000114;       使能FSMC时钟    /*-- FSMC Configuration ------------------------------------------------------ */   p.FSMC_AddressSetupTime = 2;   p.FSMC_AddressHoldTime = 0;   p.FSMC_DataSetupTime = 3;   p.FSMC_BusTurnAroundDuration = 1;   p.FSMC_CLKDivision = 0;   p.FSMC_DataLatency = 0;   p.FSMC_AccessMode = FSMC_AccessMode_A;
  FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM3;   FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable;  //地址/数据不复用   FSMC_NORSRAMInitStructure.FSMC_MemoryType = FSMC_MemoryType_SRAM;  //存储器类型   FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_16b;  //数据宽度   FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode = FSMC_BurstAccessMode_Disable;  //成组模式访问   FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low;  //等待信号极性   FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable;  //对齐成组模式   FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState;  //配置等待时序   FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable;   //允许FSMC对存储器写操作   FSMC_NORSRAMInitStructure.FSMC_WaitSignal = FSMC_WaitSignal_Disable;   //等待使能位  禁止   FSMC_NORSRAMInitStructure.FSMC_ExtendedMode = FSMC_ExtendedMode_Disable;   //扩展模式选择   FSMC_NORSRAMInitStructure.FSMC_AsyncWait = FSMC_AsyncWait_Disable;   //   FSMC_NORSRAMInitStructure.FSMC_WriteBurst = FSMC_WriteBurst_Disable;   //成组写使能选择   FSMC_NORSRAMInitStructure.FSMC_ReadWriteTimingStruct = &p;   //   FSMC_NORSRAMInitStructure.FSMC_WriteTimingStruct = &p;   //
  FSMC_NORSRAMInit(&FSMC_NORSRAMInitStructure);   
  /* Enable FSMC Bank1_SRAM Bank  */   FSMC_NORSRAMCmd(FSMC_Bank1_NORSRAM3, ENABLE);   }
写字节函数：
void FSMC_SRAM_WriteBuffer(u16* pBuffer, u32 WriteAddr, u32 NumHalfwordToWrite) {   for(; NumHalfwordToWrite != 0; NumHalfwordToWrite--) /* while there is data to write */   {     /* Transfer data to the memory */     *(u16 *) (Bank1_SRAM3_ADDR + WriteAddr) = *pBuffer++;          /* Increment the address*/       WriteAddr += 2;   }    }

问题来了：我在仿真的时候观察地址中写入的数据时发现，一进入写字节函数0X68008000以后的地址全都是0x1FF0，

执行完 *(u16 *) (Bank1_SRAM3_ADDR + WriteAddr) = *pBuffer++;这条语句后， 0X68008000以后的地址全都被写入0x3212，

0x3212这个数写的是对的，但是为什么0x68008000以后的地址全都被写成0x3212啊？
另外，再执行 for(; NumHalfwordToWrite != 0; NumHalfwordToWrite--)  时， 0X68008000以后的地址又全都写入0x1FF0， 导致最后读出的数据全是0X1FF0，看写字节函数中应该是1个字一个字写呀，为什么写完之后全被0x1FF0覆盖呀，求教，不胜感激