访问SRAM是读写时序共用.
访问LCD是读写时序分开.
你看看这两个的不同就知道了.

 回复【3楼】 颓废ю小寶 :
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我被你耍了...
你这看的是液晶代码.
液晶代码哪里没有两个时序啊?
[mw_shl_code=c,true] readWriteTiming.FSMC_AddressSetupTime = 0x01; //地址建立时间（ADDSET）为2个HCLK 1/36M=27ns readWriteTiming.FSMC_AddressHoldTime = 0x00; //地址保持时间（ADDHLD）模式A未用到 readWriteTiming.FSMC_DataSetupTime = 0x0f; // 数据保存时间为16个HCLK,因为液晶驱动IC的读数据的时候，速度不能太快，尤其对1289这个IC。 readWriteTiming.FSMC_BusTurnAroundDuration = 0x00; readWriteTiming.FSMC_CLKDivision = 0x00; readWriteTiming.FSMC_DataLatency = 0x00; readWriteTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A writeTiming.FSMC_AddressSetupTime = 0x00; //地址建立时间（ADDSET）为1个HCLK writeTiming.FSMC_AddressHoldTime = 0x00; //地址保持时间（A writeTiming.FSMC_DataSetupTime = 0x03; ////数据保存时间为4个HCLK writeTiming.FSMC_BusTurnAroundDuration = 0x00; writeTiming.FSMC_CLKDivision = 0x00; writeTiming.FSMC_DataLatency = 0x00; writeTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM4;// 这里我们使用NE4 ，也就对应BTCR[6],[7]。 FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable; // 不复用数据地址 FSMC_NORSRAMInitStructure.FSMC_MemoryType =FSMC_MemoryType_SRAM;// FSMC_MemoryType_SRAM; //SRAM FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_16b;//存储器数据宽度为16bit FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode =FSMC_BurstAccessMode_Disable;// FSMC_BurstAccessMode_Disable; FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low; FSMC_NORSRAMInitStructure.FSMC_AsynchronousWait=FSMC_AsynchronousWait_Disable; FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable; FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState; FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable; // 存储器写使能 FSMC_NORSRAMInitStructure.FSMC_WaitSignal = FSMC_WaitSignal_Disable; FSMC_NORSRAMInitStructure.FSMC_ExtendedMode = FSMC_ExtendedMode_Enable; // 读写使用不同的时序 FSMC_NORSRAMInitStructure.FSMC_WriteBurst = FSMC_WriteBurst_Disable; FSMC_NORSRAMInitStructure.FSMC_ReadWriteTimingStruct = &readWriteTiming; //读写时序 FSMC_NORSRAMInitStructure.FSMC_WriteTimingStruct = &writeTiming; //写时序 FSMC_NORSRAMInit(&FSMC_NORSRAMInitStructure); //初始化FSMC配置 FSMC_NORSRAMCmd(FSMC_Bank1_NORSRAM4, ENABLE); // 使能BANK1 [/mw_shl_code]

readWriteTiming,writeTiming,是吃屎的?

回复【5楼】正点原子:
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我知道有个 readwriteTiming 和 writeTiming 这2个时序，writeTiming 代表写时序，那么readwriteTiming 在扩展模式里是不是就代表读时序了？
    如果readwriteTiming代表读时序，咋不直接用   readTiming？

回复【6楼】颓废ю小寶:
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楼主,你自己慢慢研究吧,什么能不能,可不可以,要不要,行不行,对不对之类的问题,一律自己写代码验证.