本帖最后由 zhcj66 于 2018-10-31 08:08 编辑

STM32F407/417
Power efficiency: ST’s 90 nm process, ART Accelerator and the dynamic power scaling enables the current consumption in run mode and executing from Flash memory to be as low as 238 μA/MHz at 168 MHz.

STM32L0
Dynamic run mode: down to 49 μA/MHz (with external DC/DC) and 76 MHz (with LDO)
Ultra-low-power mode + full RAM + low power timer: 340 nA (16 wakeup lines)
Ultra-low-power mode + backup register: 230 nA (2 wakeup pins)
Wake-up time: 3.5 μs

STM32L1
Ultra-low-power mode: 280 nA with backup registers (3 wakeup pins)
Ultra-low-power mode + RTC: 900 nA with backup registers (3 wakeup pins)
Low-power run mode: down to 9 μA
Dynamic run mode: down to 177 μA/MHz

STM32L4 系列
Ultra-low-power mode: 8 nA with backup registers without real-time clock (5 wakeup pins)
Ultra-low-power mode + RTC: 200 nA with backup registers (5 wakeup pins)
Ultra-low-power mode + 16 Kbytes of RAM: 200 nA
Ultra-low-power mode + 16 Kbytes of RAM + RTC: 450 nA
Dynamic run mode: down to 36 μA/MHz
Wake-up time: 5 μs